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It has recently been reported that photoexcited carriers contribute to the contrast mechanism for thermal imaging of semiconductors. The letter demonstrates the applications and significance of this effect for imaging semiconductors with photothermal radiometry (PTR). The method leads to a direct way of monitoring the dynamics of the carrier plasma. The theoretical results are used to interpret the experimental results obtained from several semiconductor materials.
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Sheard et al. (1987) studied this question.
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