The electrical properties of antimony-doped ZnTe films are studied as a function of growth temperature. The doping is performed during the growth of the sample. Three different acceptor levels at 0.03, 0.06, and 0.14 eV from the valence band top are identified as being connected respectively to substitutional position of Sb with Te atoms, and to the native defects due to Zn vacancies which can accept one or two electrons. Films with good optical properties and low resistivity up to 4 × 10−2ΩCm are obtained at a substrate temperature of 250°C.
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Romeo et al. (1978) studied this question.
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