The surface reactions induced by an electronic potential energy of multiply-charged ions are investigated. A small electron-beam impact type ion source for production of multiply-charged ions was manufactured for this study. The charge state distribution of multiply-charged ions produced in the ion source greatly depends on the sample gas pressure and the potential barrier for ion trapping. In operation with an electron current of 7 mA at 2 keV, the ion-beam currents obtained for Ar5+and Ar10+are respectively at least 7 pA and 2× 10-3pA. H+ion desorption from a lightly etched GaAs surface are observed by bombarding with Arq+ions (q=1–3). The desorption yield of H+per Arq+increases proportionally with the sixth power of the charge state of Arq+. This charge state effect is discussed from the viewpoint of the electronic interaction between the GaAs surface and Arq+ions.
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Mochiji et al. (1994) studied this question.
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