As a first attempt, SiO2 etching characteristic is studied in a plasma produced by partially propagating helicon wave. The plasma is produced employing a ring magnet whose field profile has a zero point. Highly selective SiO2 etching is attainable in a down stream where the electron energy is fairly low, because no propagation of helicon wave and thus no radio frequency (RF) field exist there. The propagation is found by the wave pattern measurements.
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Jiwari et al. (1994) studied this question.
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