Electronic Level Alignment at an Indium Tin Oxide/PbI2 Interface and Its Applications for Organic Electronic Devices

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The electronic level alignment at the indium tin oxide (ITO)/PbI 2 interface is investigated by an ultraviolet photoelectron spectroscopy. An n-type conductivity property is found for PbI 2 as well as a downward shift energy level at the ITO/PbI 2 interface. These indicate that PbI 2 can be used as an anode buffer layer for organic electronic devices. The power conversion efficiency of the organic solar cell based on tetraphenyldibenzoperiflanthene/C 70 planar heterojunction is dramatically increased from 1.05 to 3.82%. Meanwhile, the thermally activated delayed fluorescence organic light-emitting diode based on 4,4′,4″-tri( N -carbazolyl)triphenylamine–((1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) shows a significantly reduced turn-on voltage and enhanced power efficiency from 6.26 to 18.60 lm/W. The improved performance is attributed to the high hole injection/extraction efficiency at the ITO/PbI 2 interface. Besides, the near-infrared (NIR) absorption of lead phthalocyanine (PbPc)-based NIR organic photodetector (NIR-OPD) is dramatically increased, indicating that the PbI 2 layer can also be used as a template layer for the growth of the triclinic phase of PbPc. As a result, the optimized device shows an external quantum efficiency of 26.7% and a detectivity of 9.96 × 10 11 jones at 900 nm, which are among the highest ones reported for organic NIR-OPDs.