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We have succeeded in depleting a two-dimensional electron gas channel using an oxide wire formed with an atomic force microscope. Currents in the channel depend on the height of the oxide wire on the delta-doped high-electron-mobility transistor. The current in the sample with a 20 nm-thick oxide wire is approximately one hundred times lower than that without the wire.
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Kazuhiko Matsumoto (1995) studied this question.
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