The Au/Ni/Al/Ti/Ta ohmic contact (7.5 × 10—7 Ωcm2) on the AlGaN/GaN heterostructure was demonstrated through 700 °C annealing for 1 min. The nitride phases were identified as the TaN/TiN for Au/Ni/Al/Ti/Ta and TiN for Au/Ni/Al/Ti. The strong formation of interfacial nitrides appears to be responsible for the good ohmic contact behavior in the Au/Ni/Al/Ti/Ta metal scheme. The contact resistance was found to depend on the thickness of the nitride phases.
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Kim et al. (2002) studied this question.
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