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November 2, 1998Applied Physics Letters

Microstructure of Ti/Al ohmic contacts for n-AlGaN

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Authors

SRS. RuvimovUniversity of Notre DameZLZ. Liliental‐WeberLawrence Berkeley National LaboratoryJWJ. WashburnLaboratoire de Psychologie et NeuroCognition

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Ruvimov et al. (1998) studied this question.

synapsesocial.com/papers/6a9defe2e9d65a99f6367b6dhttps://doi.org/10.1063/1.122512
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Study of contact formation in AlGaN/GaN heterostructures1997 · 68 citations
  2. 2A bilayer Ti/Ag ohmic contact for highly doped n-type GaN films1996 · 87 citations
  3. 3Microstructure of Ti/Al and Ti/Al/Ni/Au Ohmic contacts for n-GaN1996 · 293 citations
  4. 4Effect of ion-beam sputter damage on Schottky barrier formation in silicon1981 · 128 citations
  5. 5Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n -type GaN1997 · 263 citations