High-purity ZnSe layers grown by metalorganic vapor phase epitaxy exhibit an unusually strong luminescence band at 2.60 eV (Y band), which is extremely sensitive to residual impurity concentration. Y emission depends on the lattice mismatch between the epilayer and substrate. The emission decreases with the use of a lattice-matched In x Ga1-x As substrate. With the GaAs substrate, the emission intensity varies with layer thickness reflecting lattice relaxation in the ZnSe/GaAs structure.
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Shibata et al. (1988) studied this question.
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