Highly resistive GaN (>108 Ωϒ) is grown by MOVPE on sapphire with dislocation density in the range 108 to 8 × 108 cm–2, using Fe modulation doping. High mobility 2DEGs are created at AlGaN/GaN:Fe interface for moderate Al composition: 2200 cm2/V/s at ns∼7.6 × 1012 cm–2. Good DC and RF small signal behaviour could be obtained in HEMTs processed on structures with less dislocated GaN:Fe template: IDSmax = 1.28 A/mm, gmmax ∼ 290 mS/mm and fT ∼ 23 GHz were measured for 0.2 µm transistors. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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Bougrioua et al. (2005) studied this question.