Determination of deep levels in Cu-doped GaP using transient-current spectroscopy

A method of determining deep levels in semiconductor junctions by observation of the temperature dependence of transient-current decay is described and applied to Cu-doped GaP. It is shown that the important deep-level parameters including trap energy, capture cross section, concentration, and recombination rate can be obtained. For Cu-doped GaP, several trapping levels were observed with energies of 0.50, 0.60, and 0.82 eV. Capture cross sections of these levels were of the order of 1×10−16 cm2.