Influence of hydrostatic pressure on the platinum levels in silicon

Platinum diffusion gives rise to three energy levels in our silicon samples. Deep-level transient spectroscopy detects acceptor levels at Ec-235 meV and Ec-500 meV, and a donor level at Eᵥ+320 meV. The energy shift under hydrostatic pressure for either level was measured for pressures up to 0.50 GPa. The Pt acceptor at Ec-235 meV reveals the same pressure coefficient as was already reported for the well-known A center. This common property supports the recently proposed model of a vacancy-related structure for the substitutional Pt.