Alloying, elemental enrichment, and interdiffusion during the growth of Ge(Si)/Si(001) quantum dots

Ge(Si)/Si(001) quantum dots produced by gas-source molecular beam epitaxy at 575 ^∘{}C were investigated using energy-filtering transmission electron microscopy and x-ray energy dispersive spectrometry. Results show a nonuniform composition distribution in the quantum dots with the highest Ge content at the dot center. The average Ge content in the quantum dots is much higher than in the wetting layer. The quantum dot/substrate interface has been moved to the substrate side. A growth mechanism of the quantum dots is discussed based on the composition distribution and interfacial structures.