This article describes a miniaturized Kelvin probe with a lateral resolution of 40 μm. Applied to a conducting or semiconducting surface, it allows a microscopic imaging of the difference of the work functions between the Kelvin probe and a sample. The signal resolution is better than 6 mV with an integration time of 300 to 400 ms, which is sufficient for most of the applications. The necessary steps to optimize the signal processing are described in detail.
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Baumgärtner et al. (1988) studied this question.
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