Incorporation kinetics of indium in indium gallium nitride at low temperature

Recently, a phenomenological model of the incorporation kinetics of indium in indium gallium nitride was proposed based on published data from InGaN growth at relatively high fluxes and high substrate temperature, TS=650 °C. We present data from growths at much lower fluxes and at a significantly lower substrate temperature, which are also very well described by this model, as well as data for which the model appears less satisfactory. The nature of the indium self-blocking mechanism and the dependence of the model’s fitting parameters on the substrate temperature are discussed.