Very low sheet resistance AlInN/GaN HEMT grown on 100 mm Si(111) by MOVPE

This paper presents results on the properties of AlInN/GaN high electron mobility transistors (HEMT) grown on 100 mm Si(111) substrates by metal organic vapour phase epitaxy (MOVPE). To the best of our knowledge this is the first demonstration of AlInN/GaN HEMT with a very low sheet resistance of 179 ± 3.9 Ω/□ on large size Si substrates. The electron density of the two dimensional electron gas (2DEG) is as high as 3.1×1013/cm2, while the electron mobility is around 1000 cm2/Vs. The very low sheet resistance of AlInN/GaN HEMT results in a high current density of 1.3 A/mm in device operation with a gate length of 1.5 μm. The current density of the AlInN/GaN HEMT is twice as high as our standard AlGaN/GaN HEMT with the same geometry, which shows a great potential for high power switching applications. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)