AlGaN/GaN High Electron Mobility Transistors with Inclined-Gate-Recess Structure

We have studied an inclined-gate-recess structure in order to clarify the effect of increasing the electric field in the channel. Two-dimensional device simulation has revealed that the electric field and the electron velocity in the channel have increased by the inclined-gate-recess structure, which leads to an improvement of g m . AlGaN/GaN high electron mobility transistors (HEMTs) with inclined-gate-recess have been fabricated. Improved g m and f T have been obtained, which confirms the importance of increasing the electric field in the channel.