The effect of preliminary low-energy (~1 keV) and low-dose (~10 12 –10 14 cm –2 ) ion bombardment on the initial stages of growth of Si films on a CaF 2 /Si surface is investigated. Ordered nanocrystal phases (thickness less than 5–6 monolayers) and homogeneous epitaxial nanofilms (thickness more than 8–10 monolayers) of silicon are shown to be formed after annealing.
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Умирзаков et al. (2017) studied this question.
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