The electron transport and negative differential resistance in metal–insulator nanometer-thick heterostructures are reported for the first time. The structure of the samples is a resonant tunneling diode with three-barriers of 0.9-nm-thick CaF2 layers and two wells of 1.9- and 2.8-nm-thick CoSi2 layers. These layers were grown by means of partially ionized beam epitaxy for CaF2 and a two step growth technique for CoSi2. In the current-voltage characteristics at 77 K, negative differential resistance was observed in the significant number of samples and the typical peak-to-valley ratio was as high as 2. The negative differential resistance observed here can be attributed to the electron transport through the resonant levels in metal/insulator multilayered heterostructures.
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Watanabe et al. (1993) studied this question.
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