Hydrogen implanted silicon has been studied using high resolution X-ray scattering. Strain induced by implantation has been measured as a function of implantation dose. The dependence of strain with implanted dose shows different regimes starting from linear to quadratic and saturation. The observed strain is consistent with ab-initio and elasticity calculations. Strain rate changes can be associated to the predominant location of hydrogen in bond center location.
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Rieutord et al. (2013) studied this question.
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