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A model of oxide growth on silicon is presented. It is aimed toward the need for a change in oxide structure with growth temperature. These structures require a continuous series from about 600° to 1150°C. Viscous flow by "displacive shear" stress is shown as an alternative to a Maxwellian flow for the initial free volume requirement of oxide growth.
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E. A. Taft (1987) studied this question.
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