Answers are grounded in this paper and cite their sources.
Rapid thermal processing (RTP) using halogen lamps for molecular-beam-epitaxial (MBE) n-GaAs layers was investigated by deep-level transient spectroscopy. RTP was performed at 800 °C for 6 s with proximity capping method. It was found that the Ec −0.82 eV electron trap (EL2) was produced by RTP. The depth profile of EL2 was flat. The spatial variations of EL2 produced by RTP were observed across the MBE layers. The EL2 concentration increased by about two orders of magnitude toward the edge from the center of the samples (∼18×16 mm2). It was thought that the spatial distribution of EL2 corresponded to that of thermal stress induced by RTP.
No takes yet. Share an insight, caveat, or question.
Kitagawa et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: