Defect Characteristics in Different Crystallographic Directions in CzSi as a Function of Doping and Annealing

Measurements of the S-parameter as well as of lifetimes are performed as a function of thermal annealing in the 20 to 1100 °C range. CzSi with different levels of boron doping is investigated. A significant broadening of the annihilation line is found around 800 °C for the heavily doped sample. Concurrent with this a short-lived (≈ 100 ps) lifetime component is observed with an intensity up to 30%. No obvious changes in the anisotropy of the annihilation line take place.