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The transport and optical properties of tin δ layers in GaAs are investigated as functions of the Sn concentration. The Shubnikov-de Haas and Hall effects are measured in the temperature range 0.4–12 K in magnetic fields up to 38 T. The band diagrams and quantum mobilities of electrons in the quantum-well subbands are calculated. Features associated with electronic transitions from quantum-well levels are found in the photoluminescence spectra of the structures. Oscillations of the resistance are observed in a magnetic field parallel to the δ layer and are attributed to features in the density of states at the Fermi level.
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Kulbachinskiı̆ et al. (1999) studied this question.
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