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July 24, 2003Journal of Applied Physics

Optimum structure of deposited ultrathin silicon oxynitride film to minimize leakage current

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KMKouichi MuraokaToshiba (Japan)KKKazuaki KuriharaKanazawa UniversityNYNaoki YasudaRikkyo University

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Muraoka et al. (2003) studied this question.

synapsesocial.com/papers/6a9e27ca37bba822732cb2achttps://doi.org/10.1063/1.1588354
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