Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1998Physical Review Letters

Short Range Order and the Nature of Defects and Traps in Amorphous Silicon Oxynitride Governed by the Mott Rule

View Full Paper
Ask AI
Bookmark
Share

Authors

VGV. A. GritsenkoInstitute of Semiconductor PhysicsJXJianbin XuXihua UniversityRKR. KwokCity University of Hong Kong

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Gritsenko et al. (1998) studied this question.

synapsesocial.com/papers/6a94f331dd1b902261fa53b0https://doi.org/10.1103/physrevlett.81.1054
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Improvement of charge trapping characteristics of N/sub 2/O-annealed and reoxidized N/sub 2/O-annealed thin oxides1992 · 41 citations
  2. 2Traps created at the interface between the nitride and the oxide on the nitride by thermal oxidation1983 · 33 citations
  3. 3High resolution ion scattering study of silicon oxynitridation1996 · 100 citations
  4. 4Electronic structure and optical properties of α and β phases of silicon nitride, silicon oxynitride, and with comparison to silicon dioxide1995 · 209 citations
  5. 5Role of interfacial nitrogen in improving thin silicon oxides grown in N2O1993 · 161 citations