A wide-terrace single-domain Si(001)c(4×{}2) surface has been obtained by cooling a wide-terrace single-domain Si(001)2×{}1 surface to 200--80 K. Angle-resolved ultraviolet photoelectron spectra have been measured for the Si(001)c(4×{}2) surface at 200--100 K and compared with those for the Si(001)2×{}1 surface. The electronic structure of the Si(001)c(4×{}2) surface appears to be explained as that expected for ``antiferromagnetic'' order of asymmetric dimers of surface Si. The electronic structure of the Si(001)2×{}1 surface appears to be reminiscent of the c(4×{}2) surface.
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Enta et al. (1990) studied this question.