Ga0.51In0.49P/GaxIn1-xAs lattice-matched (x=1) and strained (x=0.85) two-dimensional electron gas field-effect transistors

The authors report the fabrication of n-type GaInP/Ga x In 1-x As lattice-matched (x=1) and strained (x=0.85) two-dimensional gas field-effect transistors grown by low-pressure metallorganic chemical vapour deposition on GaAs semi-insulating substrates. The GaAs-GaInP devices demonstrate excellent operational performance at low temperature, due to the absence of deep traps in doped GaInP layers. The extrinsic transconductance is 163 mS mm -1 at 300 K and 213 mS mm -1 at 77 K. The threshold voltage of the devices biased in the dark at V ds =3 V was -3.34 V at 300 K and -3.38 at 77 K. Microwave measurements revealed cut-off frequencies f T of 17.8 GHz and f MAX of 23.5 GHz.