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The effects of interface roughness scattering in a resonant-tunneling diode are examined with the self-consistent Born and the multiple sequential scattering algorithm for various interface roughness correlation lengths. The effect of a self-consistent treatment of the scattering self-energies with the quantum charge and the electrostatic and exchange-correlation potentials is demonstrated. The effects of the scattering assisted charge and the exchange and correlation potential on the spurious bistability obtained in simulations of a symmetric resonant-tunneling diode is shown.
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Klimeck et al. (1998) studied this question.
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