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Using resistance measurements, the interaction is studied between nitrogen interstitials and hydrogen dissolved in tantalum. Nitrogen is found to trap hydrogen with a trapping enthalpy of (0.06 ± 0,015) eV; this value is surprisingly small when compared with previous measurements on vanadium and niobium. Due to the trapping process, the hydrogen-induced resistivity increase is reduced by about 40%. Below room temperature, the solubility limit of hydrogen in nitrogen-free tantalum is determined in a wide temperature range. In the presence of nitrogen traps, the formation of hydride precipitates is markedly suppressed.
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Rosan et al. (1976) studied this question.
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