Thin‐Film Galvanic Cell Pb / PbF2 / PbF2 , CuF2 / Cu

Thin‐film solid‐state galvanic cells were fabricated using Pb metal as anode, as electrolyte, and as cathode. Because of the high resistivity of , it was codeposited with to form a more conductive mixed cathode layer. Such cells developed open‐circuit voltages from 0.61 to 0.70V, compared to 0.70V theoretical. Cells were discharged at room temperature with current densities of >10 μA/cm 2 . At elevated temperatures the current densities attainable were considerably higher. Cells discharged under constant load exhibited relatively constant voltage during discharge and a sudden drop‐off at the end of discharge. Cathode utilization for the cathode‐limited cells was typically 30–40%. Attempts to recharge these cells were unsuccessful.