What question did this study set out to answer?

Investigate the microscopic nature of electronic and structural defect states in epitaxial cubic silicon carbide films grown on silicon substrates.

December 15, 1990Journal of Applied Physics

Optically detected magnetic resonance of cubic SiC grown by chemical vapor deposition on Si

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Investigate the microscopic nature of electronic and structural defect states in epitaxial cubic silicon carbide films grown on silicon substrates.
Conducted optically detected magnetic resonance (ODMR) spectroscopy on epitaxial cubic silicon carbide films synthesized via chemical vapor deposition on silicon.
Evaluated spectral dependence and resonance features across aluminum-doped and undoped films over a luminescence energy range of 1.6 to 1.9 eV.
Detected a single Lorentzian resonance line at g = 2.0065 ± 0.0015 that appears strong in aluminum-doped films and is assigned to residual donors.
Observed an exchange-split resonance pair with g = 2.0024 and splitting parameter a = 0.095 cm⁻¹ in both doped and undoped films, directly associated with defect-related luminescence from 1.6 to 1.9 eV.

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Implication

Spectroscopic analysis reveals donor and defect-related magnetic resonance signatures in cubic silicon carbide films, highlighting microscopic defect mechanisms.

Cite This Study

Kennedy et al. (1990) studied this question.

synapsesocial.com/papers/6a9e3f489e834d122ee98962 https://doi.org/10.1063/1.346906

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Implication

Spectroscopic analysis reveals donor and defect-related magnetic resonance signatures in cubic silicon carbide films, highlighting microscopic defect mechanisms.

Optically detected magnetic resonance of cubic SiC grown by chemical vapor deposition on Si

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Discussion

Implication

Cite This Study

Optically detected magnetic resonance of cubic SiC grown by chemical vapor deposition on Si

Key Points

Discussion

Implication

Cite This Study

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