Free-carrier-absorption measurements of ZnSe : Al annealed under Zn-rich conditions are reported. The absorption is nearly temperature independent, linear in carrier density, and shows a ν−3 behavior. The experimental results are compared with calculations based on polar optical-mode scattering. The agreement is reasonable except for the small temperature dependence observed in the experimental absorption. The conclusions are very similar to those reached previously for CdTe : Al.
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Dutt et al. (1977) studied this question.
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