Supersonic jet epitaxy of aluminum nitride on silicon (100)

Single phase aluminum nitride (0001) has been grown on atomically clean silicon (100) substrates (720 °C≥Ts≥620 °C) with dual supersonic molecular beam gas sources. The precursors used were triethylaluminum [TEA; Al(C2H5)3] and ammonia (NH3). The maximum growth rate obtained was 0.1 μm/h. The growth rate was found to depend strongly on the kinetic energy of the incident precursors. Single phase films were grown 200–400 nm thick. Structural x-ray studies reveal 2θ full widths at half-maxima between 0.20° and 0.35° for the AlN (0002) peak.