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October 21, 1991Applied Physics Letters

Epitaxial growth of aluminum nitride on Si(111) by reactive sputtering

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Authors

WMW. J. MengShanghai Jiao Tong UniversityJHJoseph P. HeremansThe Ohio State UniversityYCYang‐Tse ChengUniversity of Kentucky

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Meng et al. (1991) studied this question.

synapsesocial.com/papers/6a913d3dd613fa9f3b465a49https://doi.org/10.1063/1.106092
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships1981 · 81 citations
  2. 2Reactive sputter deposition of zirconium nitride/aluminum nitride multilayers: Chemical competition effects and structural characterizations1991 · 14 citations
  3. 3Epitaxial growth of ZrN on Si(100)1988 · 35 citations
  4. 4On pointed minima in the interfacial energy of bicrystal systems1965 · 50 citations
  5. 5Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering1985 · 206 citations