Interference between electronic and LO-vibronic inelastic light scattering in periodically δ-doped GaAs

The recently observed asymmetry in the Raman lines of periodically {δ}-doped GaAs in the region of the LO phonon is theoretically interpreted as the interference of a continuum of single-particle transitions with the LO one-phonon line. The dependence of the line shape on the exciting frequency is produced by the difference in resonant behavior exhibited by these two light-scattering mechanisms.