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Threshold fields have been measured with respect to switching phenomena in thin films of the S–Se–Te systems. The measured threshold field Eth was found to vary as 1/d where d is the film thickness, ranging from 0.1 to 2 μm. The relationship observed between the treshold voltage and ambient temperature indicated that the glass transition temperature played a significant role in both conduction and switching phenomena.
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Hirose et al. (1973) studied this question.
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