Thin oxide films of GaAs grown in a plasma have been analyzed using Rutherford backscattering and ion-induced x rays. Films whose thicknesses are greater than 1000 Å have a composition of O:Ga:As of 3:1.07:1. For the thinner films, the oxygen content is less indicating an incomplete oxidation.
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Kauffman et al. (1977) studied this question.
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