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Homogeneous thin films of CuTCNQ were prepared by vapor-deposition method and were found to be writable and erasable with LD beams. Threshold irradiation time to write spots was 3 to 5 µs with LD power of 16 mW at the wavelength of 810 nm. The readout signal contrast was 27. About fifty write-erase cycles were achieved by applying a ZnS protective layer on the CuTCNQ film.
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Hoshino et al. (1986) studied this question.
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