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January 1, 1979physica status solidi (b)

Burstein‐Moss effect and near‐band‐edge luminescence spectrum of highly doped indium arsenide

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VVV. A. VilkotskiiBelarusian State UniversityДДД. С. ДоманевскийBelarusian State Technological UniversityRKRoumen KakanakovBulgarian Academy of Sciences

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Vilkotskii et al. (1979) studied this question.

synapsesocial.com/papers/6a9e4ad374bfeee0946aad37https://doi.org/10.1002/pssb.2220910106
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Also Consider

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  1. 1Indirect Optical Transitions Induced by Carrier Interaction in Semiconductors1965 · 25 citations
  2. 2The Interpretation of the Properties of Indium Antimonide1954 · 1,925 citations
  3. 3Optical Transitions Involving Impurities in Semiconductors1963 · 260 citations
  4. 4Impurity States in Semiconducting Masers1964 · 33 citations