Si delta-doped field-effect transistors by atmospheric pressure metalorganic chemical vapor deposition

Si delta-doped GaAs field-effect transistors (FETs) are demonstrated by atmospheric pressure metalorganic chemical vapor deposition (MOCVD) and characterized by Hall-effect, capacitance-voltage (C-V), and Shubnikov de-Haas measurements. The Si delta doping was accomplished by interrupting the growth and flowing silane with controlled timing under an arsenic overpressure. Devices with 0.5 μm gate length (Ns=2.2×1012 cm−2) were fabricated with a maximum extrinsic transconductance of 140 mS/mm and a current gain cutoff frequency of 17 GHz. The transconductance as a function of gate voltage showed a plateau region through a range of 1.5 V further supporting spatial confinement of the electrons.