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The effect of the composition of Ru–AlO thin films on the interfacial adhesion energy of an Ru–AlO thin film deposited by atomic layer deposition (ALD) between Cu and SiO2, which is a potential candidate for a Cu direct-plateable diffusion barrier, was evaluated using a four-point bending test. The interfacial adhesion energy increased with increasing AlO x content in the Ru–AlO thin films. The results were quantitatively correlated with the interfacial chemical bonding characteristics analyzed by X-ray photoemission spectroscopy, which showed that the adhesion energy is closely related to the formation of strong Al–O–Si bonds at film/substrate interfaces.
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Kim et al. (2012) studied this question.
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