Growth of Ga1-xBxN by Molecular Beam Epitaxy

Pseudobinary compounds of column III elements and nitrogen are semiconductors widely studied for optoelectronic applications. Ga1- x B x N compounds are considered to be prone to phase separation due to the large difference in bond length between B–N and Ga–N. However if a sufficient amount of boron can be incorporated to Ga1- x B x N compounds, lattice matching with substrates such as SiC, AlN and Ga1- x Al x N may be achieved. We used molecular beam epitaxy to grow Ga1- x B x N films on sapphire c faces with various values of x. Single-phase wurtzite Ga1- x B x N with x up to 4.56% has been obtained.