Physics-Based SPICE Model of Slant Field Plate GaN HEMTs

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This article introduces a SPICE-compatible compact model for GaN HEMTs with slant field plates (FPs), implemented using the ASM-HEMT framework. The slant FP geometry, critical for optimizing electric field distribution and breakdown performance, is approximated as a multistep gate FP structure. It is shown that conventional HEMT models using normal gate FPs fail to accurately capture the capacitance behavior of these devices. To address this limitation, a new modeling methodology is developed within the ASM-HEMT framework. This approach ensures accurate simulation of device behavior while maintaining computational efficiency. Validated against TCAD simulations and experimental data, the model demonstrates strong agreement across pulsedI–V,C–V, and large-signal RF load–pull characteristics.