Ultra-low profile and high heat dissipation multi-layered SAW device employing sapphire substrate

This paper describes a realization of a low loss, low profile, high power handling surface acoustic wave (SAW) device for 5 G applications using both our unique wafer and packaging technologies. First, improvements in insertion loss and phase velocity variation of a SAW device employing a thin piezoelectric layer and a multi-layered substrate are confirmed. Next, the structure of a direct-mount type face-up package with multi-layered sapphire substrate is proposed. The improvements in mechanical strength and the heat dissipation of the proposed structure are verified theoretically and experimentally on the n41 filter. Finally, the high power linearity up to 35 dBm or above input power is achieved. Furthermore, n1/n3/n66 Multiplexer is realized by applying these technologies. High power linearity up to 34.8 dBm is achieved on n3 Tx.