Low-temperature and selective growth of β-SiC using the SiH2Cl2/C3H8/H2/HCl gas system

β-SiC is grown on a Si (100) substrate by the chemical vapor deposition method using the SiH2Cl2/C3H8/H2/HCl/ gas system. The addition of HCl to the SiH2Cl2/C3H8/H2 gas system makes it possible to grow stoichiometric β-SiC at the low temperature of 1000 °C. Moreover, β-SiC selective deposition on a Si (100) surface, with no nucelation on a SiO2 surface, is achieved in more than 1.5% HCl concentration. The mechanism of low-temperature selective β-SiC growth due to HCl addition is discussed.