We compare calculated intrinsic forward delay as a function of base thickness and p-type doping level in n-p-n heterojunction bipolar transistors with graded as well as abrupt Al0.48In0.52As/In0.53Ga0.47As and InP/In0.53Ga0.47As emitter-base junctions. We find that, for a given p-type concentration and fixed base delay time, an InP/In0.53Ga0.47As abrupt junction design results in high intrinsic speed, low base resistance, and modest power consumption.
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Baquedano et al. (1994) studied this question.
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