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In strong magnetic fields, the magnetoconductance of an electron gas formed in an Al x Ga1-x As/GaAs heterojunction interface has been studied. It has been found that the localization effect of the electron gas in the interface at tails of Landau levels is not so remarkable at the range between the spin-split levels of the first Landau level compared with that between the first and second Landau levels, and an abnormally large effective g-value has been observed. Several differences between phenomena in Si-MOS FET and those in Al x Ga1-x As/GaAs heterojunction FET are discussed.
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Narita et al. (1981) studied this question.
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