Incorporation of the Donor Indium in Nanocrystalline ZnO

Nanocrystalline zinc oxide (n-ZnO) doped with 111In has been prepared by the method of electrochemical deposition under oxidizing conditions (EDOC). After growth, a crystal size of 5 nm was determined. Investigations of the incorporation of 111In in the host lattice are performed by the method of perturbed γγ-angular correlation (PAC). After growth, the PAC experiments show that 111In is incorporated in a not yet identified complex local structure. Subsequent annealing at about 573 K incorporates 111In on substitutional Zn site in n-ZnO, which is a prerequisite for the incorporation of In as a shallow donor.