A‐plane (112 0) InN has been successfully grown on R‐plane (101 2) sapphire substrate by electron cyclotron resonance (ECR) plasma‐exited molecular beam epitaxy through substrate nitridation process. The substrate nitridation of R‐plane sapphire by ECR nitrogen plasma was carried out at 430 °C for 10 and 15 min. The results of reflection high‐energy electron diffraction (RHEED), X‐ray diffraction (XRD), and scanning electron microscopy indicated the formation of A‐plane InN on R‐plane sapphire. Inclusion of cubic InN was also observed together with A‐plane InN through RHEED and XRD measurements in case of A‐plane InN layer grown on 10 min nitridated substrate. However, when the nitridation time of R‐plane sapphire by ECR nitrogen plasma increased to 15 min, it is confirmed that formation of cubic InN was successfully suppressed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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Kumagai et al. (2006) studied this question.
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